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1. general description the 74hc2g125; 74hct2g125 is a high-speed, si-gate cmos device. the 74hc2g125; 74hct2g125 provides two non-inverting buffer/line drivers with 3-state output. the 3-state output is controlled by the output enable input (pin n oe). a high level at pin n oe causes the output to assume a high-impedance off-state. the bus driver output currents are equal compared to the 74hc125 and 74hct125. 2. features n wide supply voltage range from 2.0 v to 6.0 v n symmetrical output impedance n high noise immunity n low power consumption n balanced propagation delays n esd protection: u hbm jesd22-a114e exceeds 2000 v u mm jesd22-a115-a exceeds 200 v n multiple package options n speci?ed from - 40 cto+85 c and - 40 c to +125 c 3. ordering information 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state rev. 04 4 july 2008 product data sheet table 1. ordering information type number package temperature range name description version 74hc2g125dp - 40 c to +125 c tssop8 plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm sot505-2 74hct2g125dp 74hc2g125dc - 40 c to +125 c vssop8 plastic very thin shrink small outline package; 8 leads; body width 2.3 mm sot765-1 74hct2g125dc 74HC2G125GD - 40 c to +125 c xson8u plastic extremely thin small outline package; no leads; 8 terminals; utlp based; body 3 2 0.5 mm sot996-2 74hct2g125gd
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 2 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state 4. marking 5. functional diagram 6. pinning information 6.1 pinning table 2. marking type number marking code 74hc2g125dp h25 74hct2g125dp t25 74hc2g125dc h25 74hct2g125dc t25 74HC2G125GD h25 74hct2g125gd t25 fig 1. logic symbol fig 2. iec logic symbol fig 3. logic diagram (one driver) mce185 1a 1y 2 1 6 1oe 2a 2y 5 7 3 2oe mce186 1 1 2 6 2 en1 7 3 5 en2 mna120 a y oe fig 4. pin con?guration sot505-2 (tssop8) and sot765-1 (vssop8) fig 5. pin con?guration sot996-2 (xson8u) 1oe v cc 1a 2oe 2y 1y gnd 2a 001aae074 1 2 3 4 6 5 8 7 74hc2g125 74hct2g125 001aai333 74hc2g125 74hct2g125 transparent top view 8 7 6 5 1 2 3 4 1oe 1a 2y gnd v cc 2oe 1y 2a
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 3 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state 6.2 pin description 7. functional description [1] h = high voltage level; l = low voltage level; x = dont care; z = high-impedance off-state. 8. limiting values [1] the input and output voltage ratings may be exceeded if the input and output current ratings are observed. [2] for tssop8 package: above 55 c the value of p tot derates linearly with 2.5 mw/k. for vssop8 package: above 110 c the value of p tot derates linearly with 8 mw/k. for xson8u package: above 45 c the value of p tot derates linearly with 2.4 mw/k. table 3. pin description symbol pin description 1 oe, 2 oe 1, 7 output enable input (active low) 1a, 2a 2, 5 data input gnd 4 ground (0 v) 1y, 2y 6, 3 data output v cc 8 supply voltage table 4. function table [1] control input output n oe na ny lll lhh hxz table 5. limiting values in accordance with the absolute maximum rating system (iec 60134). voltages are referenced to gnd (ground = 0 v). symbol parameter conditions min max unit v cc supply voltage - 0.5 +7.0 v i ik input clamping current v i < - 0.5 v or v i >v cc + 0.5 v [1] - 20 ma i ok output clamping current v o < - 0.5 v or v o >v cc + 0.5 v [1] - 20 ma i o output current v o = - 0.5 v to (v cc + 0.5 v) [1] -35ma i cc supply current - 70 ma i gnd ground current - 70 - ma t stg storage temperature - 65 +150 c p tot total power dissipation t amb = - 40 c to +125 c [2] - 300 mw
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 4 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state 9. recommended operating conditions 10. static characteristics table 6. recommended operating conditions voltages are referenced to gnd (ground = 0 v). symbol parameter conditions 74hc2g125 74hct2g125 unit min typ max min typ max v cc supply voltage 2.0 5.0 6.0 4.5 5.0 5.5 v v i input voltage 0 - v cc 0-v cc v v o output voltage 0 - v cc 0-v cc v t amb ambient temperature - 40 +25 +125 - 40 +25 +125 c d t/ d v input transition rise and fall rate v cc = 2.0 v - - 625 - - - ns/v v cc = 4.5 v - 1.67 139 - 1.67 139 ns/v v cc = 6.0 v - - 83 - - - ns/v table 7. static characteristics voltages are referenced to gnd (ground = 0 v). all typical values are measured at t amb =25 c. symbol parameter conditions t amb = - 40 c to +85 c t amb = - 40 c to +125 c unit min typ max min max 74hc2g125 v ih high-level input voltage v cc = 2.0 v 1.5 1.2 - 1.5 - v v cc = 4.5 v 3.15 2.4 - 3.15 - v v cc = 6.0 v 4.2 3.2 - 4.2 - v v il low-level input voltage v cc = 2.0 v - 0.8 0.5 - 0.5 v v cc = 4.5 v - 2.1 1.35 - 1.35 v v cc = 6.0 v - 2.8 1.8 - 1.8 v v oh high-level output voltage v i = v ih or v il i o = - 20 m a; v cc = 2.0 v 1.9 2.0 - 1.9 - v i o = - 20 m a; v cc = 4.5 v 4.4 4.5 - 4.4 - v i o = - 20 m a; v cc = 6.0 v 5.9 6.0 - 5.9 - v i o = - 6.0 ma; v cc = 4.5 v 3.84 4.32 - 3.7 - v i o = - 7.8 ma; v cc = 6.0 v 5.34 5.81 - 5.2 - v v ol low-level output voltage v i = v ih or v il i o = 20 m a; v cc = 2.0 v - 0 0.1 - 0.1 v i o = 20 m a; v cc = 4.5 v - 0 0.1 - 0.1 v i o = 20 m a; v cc = 6.0 v - 0 0.1 - 0.1 v i o = 6.0 ma; v cc = 4.5 v - 0.15 0.33 - 0.4 v i o = 7.8 ma; v cc = 6.0 v - 0.16 0.33 - 0.4 v i i input leakage current v i =v cc or gnd; v cc = 6.0 v - - 1.0 - 1.0 m a i oz off-state output current v i = v ih or v il ; v o =v cc or gnd; v cc = 6.0 v -- 5.0 - 10 m a
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 5 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state 11. dynamic characteristics i cc supply current v i =v cc or gnd; i o =0a; v cc = 6.0 v - - 10 - 20 m a c i input capacitance - 1.0 - - - pf c o output capacitance - 1.5 - - - pf 74hct2g125 v ih high-level input voltage v cc = 4.5 v to 5.5 v 2.0 1.6 - 2.0 - v v il low-level input voltage v cc = 4.5 v to 5.5 v - 1.2 0.8 - 0.8 v v oh high-level output voltage v i = v ih or v il ; v cc = 4.5 v i o = - 20 m a 4.4 4.5 - 4.4 - v i o = - 6.0 ma 3.84 4.32 - 3.7 - v v ol low-level output voltage v i = v ih or v il ; v cc = 4.5 v i o = 20 m a - 0 0.1 - 0.1 v i o = 6.0 ma - 0.16 0.33 - 0.4 v i i input leakage current v i =v cc or gnd; v cc = 5.5 v - - 1.0 - 1.0 m a i oz off-state output current v i = v ih or v il ; v o = v cc or gnd; v cc = 5.5 v -- 5.0 - 10 i cc supply current v i =v cc or gnd; i o =0a; v cc = 5.5 v - - 10 - 20 m a d i cc additional supply current per input; v cc = 4.5 v to 5.5 v; v i =v cc - 2.1 v; i o =0a - - 375 - 410 m a c i input capacitance - 1.0 - - - pf c o output capacitance - 1.5 - - - pf table 7. static characteristics continued voltages are referenced to gnd (ground = 0 v). all typical values are measured at t amb =25 c. symbol parameter conditions t amb = - 40 c to +85 c t amb = - 40 c to +125 c unit min typ max min max table 8. dynamic characteristics voltages are referenced to gnd (ground = 0 v); c l = 50 pf unless otherwise speci?ed; for test circuit see figure 8 . symbol parameter conditions t amb = - 40 c to +85 c t amb = - 40 c to +125 c unit min typ [1] max min max 74hc2g125 t pd propagation delay na to ny; see figure 6 [2] v cc = 2.0 v - 35 115 - 135 ns v cc = 4.5 v - 11 23 - 27 ns v cc = 5.0 v; c l =15pf - 10 - - - ns v cc = 6.0 v - 8 20 - 23 ns
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 6 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state [1] all typical values are measured at t amb = 25 c. [2] t pd is the same as t plh and t phl . t en is the same as t pzl and t pzh . t dis is the same as t plz and t phz . t t is the same as t thl and t tlh . [3] c pd is used to determine the dynamic power dissipation (p d in m w). p d =c pd v cc 2 f i n+ s (c l v cc 2 f o ) where: f i = input frequency in mhz; f o = output frequency in mhz; c l = output load capacitance in pf; v cc = supply voltage in v; n = number of inputs switching; s (c l v cc 2 f o ) = sum of outputs. t en enable time n oe to ny; see figure 7 [2] v cc = 2.0 v - 40 115 - 135 ns v cc = 4.5 v - 11 23 - 27 ns v cc = 6.0 v - 8 20 - 23 ns t dis disable time n oe to ny; see figure 7 [2] v cc = 2.0 v - 24 125 - 150 ns v cc = 4.5 v - 12 25 - 30 ns v cc = 6.0 v - 10 21 - 26 ns t t transition time see figure 6 [2] v cc = 2.0 v - 18 75 - 90 ns v cc = 4.5 v - 6 15 - 18 ns v cc = 6.0 v - 5 13 - 15 ns c pd power dissipation capacitance per buffer; v i = gnd to v cc [3] output enabled - 11 - - - pf output disabled - 1 - - - pf 74hct2g125 t pd propagation delay na to ny; see figure 6 [2] v cc = 4.5 v - 15 31 - 38 ns v cc = 5.0 v; c l =15pf - 12 - - - ns t en enable time n oe to ny; see figure 7 ; v cc = 4.5 v [2] - 15 35 - 42 ns t dis disable time n oe to ny; see figure 7 ; v cc = 4.5 v [2] - 15 31 - 38 ns t t transition time see figure 6 ; v cc = 4.5 v [2] - 6 15 - 18 ns c pd power dissipation capacitance per buffer; v i = gnd to v cc - 1.5 v [3] output enabled - 11 - - - pf output disabled - 1 - - - pf table 8. dynamic characteristics continued voltages are referenced to gnd (ground = 0 v); c l = 50 pf unless otherwise speci?ed; for test circuit see figure 8 . symbol parameter conditions t amb = - 40 c to +85 c t amb = - 40 c to +125 c unit min typ [1] max min max
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 7 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state 12. waveforms measurement points are given in t ab le 9 . logic levels: v ol and v oh are typical output voltage levels that occur with the output load. fig 6. propagation delays data input (na) to output (ny) 001aad982 t plh t phl v m v m 90 % 10 % v m v m output ny input na v i gnd v oh v ol t tlh t thl measurement points are given in t ab le 9 . logic levels: v ol and v oh are typical output voltage levels that occur with the output load. fig 7. enable and disable times mna362 t plz t phz outputs disabled outputs enabled v y v x outputs enabled output low-to-off off-to-low output high-to-off off-to-high noe input v i v ol v oh v cc v m gnd gnd t pzl t pzh v m v m table 9. measurement points type input output v m v m v x v y 74hc2g125 0.5v cc 0.5v cc v ol + 0.3 v v oh - 0.3 v 74hct2g125 1.3 v 1.3 v v ol + 0.3 v v oh - 0.3 v
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 8 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state test data is given in t ab le 10 . de?nitions test circuit: r t = termination resistance should be equal to output impedance z o of the pulse generator. c l = load capacitance including jig and probe capacitance. r l = load resistance. s1 = test selection switch. fig 8. load circuitry for measuring switching times v m v m t w t w 10 % 90 % 0 v v i v i negative pulse positive pulse 0 v v m v m 90 % 10 % t f t r t r t f 001aad983 dut v cc v cc v i v o r t r l s1 c l open g table 10. test data type input load s1 position v i t r , t f c l r l t phl , t plh t pzh , t phz t pzl , t plz 74hc2g125 v cc 6 ns 15 pf, 50 pf 1 k w open gnd v cc 74hct2g125 3 v 6 ns 15 pf, 50 pf 1 k w open gnd v cc
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 9 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state 13. package outline fig 9. package outline sot505-2 (tssop8) unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (1) z (1) q references outline version european projection issue date iec jedec jeita mm 0.15 0.00 0.95 0.75 0.38 0.22 0.18 0.08 3.1 2.9 3.1 2.9 0.65 4.1 3.9 0.70 0.35 8 0 0.13 0.1 0.2 0.5 dimensions (mm are the original dimensions) note 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 0.47 0.33 sot505-2 - - - 02-01-16 w m b p d z e 0.25 14 8 5 q a 2 a 1 l p (a 3 ) detail x a l h e e c v m a x a y 2.5 5 mm 0 scale tssop8: plastic thin shrink small outline package; 8 leads; body width 3 mm; lead length 0.5 mm sot505-2 1.1 pin 1 index
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 10 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state fig 10. package outline sot765-1 (vssop8) unit a 1 a max. a 2 a 3 b p l h e l p wy v ce d (1) e (2) z (1) q references outline version european projection issue date iec jedec jeita mm 0.15 0.00 0.85 0.60 0.27 0.17 0.23 0.08 2.1 1.9 2.4 2.2 0.5 3.2 3.0 0.4 0.1 8 0 0.13 0.1 0.2 0.4 dimensions (mm are the original dimensions) notes 1. plastic or metal protrusions of 0.15 mm maximum per side are not included. 2. plastic or metal protrusions of 0.25 mm maximum per side are not included. 0.40 0.15 q 0.21 0.19 sot765-1 mo-187 02-06-07 w m b p d z e 0.12 14 8 5 q a 2 a 1 q l p (a 3 ) detail x a l h e e c v m a x a y 2.5 5 mm 0 scale vssop8: plastic very thin shrink small outline package; 8 leads; body width 2.3 mm sot765-1 1 pin 1 index
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 11 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state fig 11. package outline sot996-2 (xson8u) references outline version european projection issue date iec jedec jeita sot996-2 - - - - - - sot996-2 07-12-18 07-12-21 unit a max mm 0.5 0.05 0.00 0.35 0.15 3.1 2.9 0.5 1.5 0.5 0.3 0.6 0.4 0.1 0.05 a 1 dimensions (mm are the original dimensions) xson8u: plastic extremely thin small outline package; no leads; 8 terminals; utlp based; body 3 x 2 x 0.5 mm 0 1 2 mm scale b d 2.1 1.9 e e e 1 l l 1 0.15 0.05 l 2 v w 0.05 y y 1 0.1 c y c y 1 x b 14 85 e 1 e a c b v m c w m l 2 l 1 l terminal 1 index area b a d e detail x a a 1
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 12 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state 14. abbreviations 15. revision history table 11. abbreviations acronym description cmos complementary metal oxide semiconductor dut device under test esd electrostatic discharge hbm human body model mm machine model table 12. revision history document id release date data sheet status change notice supersedes 74hc_hct2g125_4 20080704 product data sheet - 74hc_hct2g125_3 modi?cations: ? the format of this data sheet has been redesigned to comply with the new identity guidelines of nxp semiconductors. ? legal texts have been adapted to the new company name where appropriate. ? section 8 : derating factor for tssop8, vssop8 and xson8u package added ? added type numbers 74HC2G125GD and 74hct2g125gd (xson8u package) 74hc_hct2g125_3 20060102 product data sheet - 74hc_hct2g125_2 74hc_hct2g125_2 20030303 product speci?cation - 74hc_hct2g125_1 74hc_hct2g125_1 20030131 product speci?cation - -
74hc_hct2g125_4 ? nxp b.v. 2008. all rights reserved. product data sheet rev. 04 4 july 2008 13 of 14 nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state 16. legal information 16.1 data sheet status [1] please consult the most recently issued document before initiating or completing a design. [2] the term short data sheet is explained in section de?nitions. [3] the product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple dev ices. the latest product status information is available on the internet at url http://www .nxp .com . 16.2 de?nitions draft the document is a draft version only. the content is still under internal review and subject to formal approval, which may result in modi?cations or additions. nxp semiconductors does not give any representations or warranties as to the accuracy or completeness of information included herein and shall have no liability for the consequences of use of such information. short data sheet a short data sheet is an extract from a full data sheet with the same product type number(s) and title. a short data sheet is intended for quick reference only and should not be relied upon to contain detailed and full information. for detailed and full information see the relevant full data sheet, which is available on request via the local nxp semiconductors sales of?ce. in case of any inconsistency or con?ict with the short data sheet, the full data sheet shall prevail. 16.3 disclaimers general information in this document is believed to be accurate and reliable. however, nxp semiconductors does not give any representations or warranties, expressed or implied, as to the accuracy or completeness of such information and shall have no liability for the consequences of use of such information. right to make changes nxp semiconductors reserves the right to make changes to information published in this document, including without limitation speci?cations and product descriptions, at any time and without notice. this document supersedes and replaces all information supplied prior to the publication hereof. suitability for use nxp semiconductors products are not designed, authorized or warranted to be suitable for use in medical, military, aircraft, space or life support equipment, nor in applications where failure or malfunction of an nxp semiconductors product can reasonably be expected to result in personal injury, death or severe property or environmental damage. nxp semiconductors accepts no liability for inclusion and/or use of nxp semiconductors products in such equipment or applications and therefore such inclusion and/or use is at the customers own risk. applications applications that are described herein for any of these products are for illustrative purposes only. nxp semiconductors makes no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. limiting values stress above one or more limiting values (as de?ned in the absolute maximum ratings system of iec 60134) may cause permanent damage to the device. limiting values are stress ratings only and operation of the device at these or any other conditions above those given in the characteristics sections of this document is not implied. exposure to limiting values for extended periods may affect device reliability. terms and conditions of sale nxp semiconductors products are sold subject to the general terms and conditions of commercial sale, as published at http://www .nxp .com/pro? le/ter ms , including those pertaining to warranty, intellectual property rights infringement and limitation of liability, unless explicitly otherwise agreed to in writing by nxp semiconductors. in case of any inconsistency or con?ict between information in this document and such terms and conditions, the latter will prevail. no offer to sell or license nothing in this document may be interpreted or construed as an offer to sell products that is open for acceptance or the grant, conveyance or implication of any license under any copyrights, patents or other industrial or intellectual property rights. 16.4 trademarks notice: all referenced brands, product names, service names and trademarks are the property of their respective owners. 17. contact information for more information, please visit: http://www .nxp.com for sales of?ce addresses, please send an email to: salesad dresses@nxp.com document status [1] [2] product status [3] de?nition objective [short] data sheet development this document contains data from the objective speci?cation for product development. preliminary [short] data sheet quali?cation this document contains data from the preliminary speci?cation. product [short] data sheet production this document contains the product speci?cation.
nxp semiconductors 74hc2g125; 74hct2g125 dual buffer/line driver; 3-state ? nxp b.v. 2008. all rights reserved. for more information, please visit: http://www.nxp.com for sales office addresses, please send an email to: salesaddresses@nxp.com date of release: 4 july 2008 document identifier: 74hc_hct2g125_4 please be aware that important notices concerning this document and the product(s) described herein, have been included in section legal information. 18. contents 1 general description . . . . . . . . . . . . . . . . . . . . . . 1 2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 3 ordering information . . . . . . . . . . . . . . . . . . . . . 1 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 functional diagram . . . . . . . . . . . . . . . . . . . . . . 2 6 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 6.1 pinning . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 6.2 pin description . . . . . . . . . . . . . . . . . . . . . . . . . 3 7 functional description . . . . . . . . . . . . . . . . . . . 3 8 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3 9 recommended operating conditions. . . . . . . . 4 10 static characteristics. . . . . . . . . . . . . . . . . . . . . 4 11 dynamic characteristics . . . . . . . . . . . . . . . . . . 5 12 waveforms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 13 package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 14 abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 15 revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 16 legal information. . . . . . . . . . . . . . . . . . . . . . . 13 16.1 data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 16.2 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 16.3 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 16.4 trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 17 contact information. . . . . . . . . . . . . . . . . . . . . 13 18 contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14

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